题目：Metallic Interfaces between Two Oxide Insulators: A New Opportunity for Electronics

报告人：陈允忠  丹麦技术大学

地点： 教十二-201

时间： 6月15日，周四，15:30-16:30

摘要：

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3(LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) [1,2], provides unforeseen opportunity for developing all-oxide electronic devices. However, the origin of the interface conduction is still under debate. Furthermore, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides. Herein, I will discuss our recent discoveries of various types of metallic and insulating oxide interfaces [2-5] as well as the achievement of modulation doping of LAO/STO interface with extreme mobility enhancement by inserting a polar buffer layer of La1-xSrxMnO3 (0≤x<1) at the interface [6]. The new insights into the quantum Hall effect [6], ferromagnetic 2DEGs and spintronic devices of complex oxide interfaces will be also discussed. 

Reference:

1. Ohtomo, A. Hwang, H. Y. A high-mobility electron gas at the LaAlO3/SrTiO3heterointerface. Nature427, 423-426 (2004).

2. Chen Y. Z. et al. A high-mobility two-dimensional electron gas at the spinel/perovskite interface of ᵞ-Al2O3/SrTiO3. Nature Commun. 4, 1371 (2013).

3. Chen Y. Z. et al. Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interfaces. Nano. Lett. 15, 1849-1854 (2015).

4. Chen Y. Z. et al. Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures. Nano. Lett.11, 3774-3778 (2011).

5. Chen, Y. Z. et al. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping. Nature Mater. 14, 801 (2015).

6. Trier, F., Chen, Y. Z. et al. Quantization of Hall resistance at the metallic interface between an oxide insulator and SrTiO3. Phys. Rev. Lett. 117, 096804 (2016).

个人简介：

陈允忠，现为丹麦技术大学能源系副教授。他于2009年中科院物理所磁学国家重点实验室获得博士学位，并于2016 年获得丹麦王国技术科学大博士学位。从2009年至今在丹麦 Risø可持续能源国家实验室以及丹麦技术大学，先后任博士后、Scientist 以及 Senior Scientist。一直以来主要从事氧化物异质结以及氧化物界面二维电子液体研究和氧化物薄膜在能源器件如固体氧化物电化学器件中的应用。围绕有关研究已经发表 SCI文章50余篇，引用 600 余次,包括以第一作者/通信作者发表在Nature Materials、Physical Review Letters、Nature Communications、Nano Letters、Advanced Materials和 Appl. Phys. Lett.等学术刊物上。

欢迎老师和同学参加！