题目：Band Structure Engineering and Defect Control in Solar Cell Materials

报告人：魏苏淮    北京计算科学研究中心   

地点： 教十二—201

时间： 3月12日，周五，15:30-16:30

 摘要

First-principles study of semiconductor materials plays an important role in developing clean energy technologies because it can provide useful physical insights, fresh perspective and new design principles for developing innovative clean energy materials with high solar power conversion efficiency and reduced cost. Similar to other semiconductors, one of the most important issues in solar energy material is to control the defects, either for introducing charge carrier, improving charge transport, or reducing non-radiative carrier recombination. A good solar cell material should have good dopability such that charge carriers can be created easily to generate the required electric field and have less defect-induced recombination centers such that it has high carrier life time and minority carrier mobility, so photo-generated charge can be easily collected. In this talk, using thin-film solar cell absorber materials CdTe, CIGS and CZTS as examples, I will discuss how theoretical first-principles studies can be used to better understand and improve the solar cell performance.

 个人简介

 魏苏淮教授现任北京计算科学研究中心讲座教授、材料与能源研究部主任，国家特聘专家，国家重点专项首席科学家，国家基金委重大项目负责人，美国物理学会会士（APS Fellow），美国材料学会会士（MRS Fellow）。1981年本科毕业于复旦大学，1985年在美国威廉玛丽学院取得理学博士学位，1985年-2015年，在美国可再生能源国家实验室(NREL)历任博士后、科学家、资深科学家、首席科学家、理论研究室主任，实验室Fellow。在半导体能带、合金、缺陷、能源与光电材料设计等领域取得了大量原创性且具有国际影响力的科研成果。已发表SCI论文520余篇，包括70余篇PRL。论文引用59000多次，H因子120。

欢迎老师和同学参加！