题目：2D semiconductors with higher mobility and scalabilityfor low temperature quantum electronics

报告人：韩拯

时间：2026年5月26日(周二)下午15:30

地点：紫金港校区段永平教学楼2号楼212报告厅

摘要：

It is well known that since the discovery of the quantum Hall effect in high-mobility two.dimensional electron gases in quantum wells over 40 years ago, the realization of theauantum Hall effect or fractional auantum Hall effect in two-dimensional electron systemsremains very limited. Among them, the low-temperature ground state of high-mobility two.dimensional semiconductors is particularly difficult to realize, mainly due to the extremelychallengina acquisition of Ohmic contacts.

In this talk, we will introduce our latest progress in the stable and reliable preparation oflow-temperature Ohmic contacts in N-type molybdenum disulfide field-effect transistors,where the quantum limit (filling factor of \nu=1) can be achieved, and fractional quantumHall effect (FQHE) under mK temperatures are observed. Our results suggest that highmobility MoS, transistors can play as a platform for future cryogenic temperature quantumelectronic devices.

We will also discuss Al-driven robotic system for high yield 2D heterostructure samplefabrications- potentially for scaled up production of van der Waals nanoelectronics.

References:

1.S. Zhao, et al., Nature Electronics 7, 1117-1125 (2024).

2.Y,Liu,et al..Nature Communications 17.2393(2026).

个人简介：

Zheng Vitto Han is aresearch professor at the nstitute of OptoelectronicsShanxi University, and iointly as a research scientist at the Liaoning Academy oMaterials (LAM)in Shenyang, China. Over the past few years, his team hasuncovered a series of novel physical phenomena and nanostructures, such asthe demonstration of a finFET with a single atomic fin, the realization of robustquantum Hall phases through the interfacial charge transfer and the inducedcharge orderings, and the development of van der Waals polarity-engineered 3Dintegration of 2D complementary logid.